Part Number Hot Search : 
SM360C R1172H32 LM308A MSK611 6BD1C4 2SC39 TAR5S37U TZ375N
Product Description
Full Text Search

6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array

6AM12_1641694.PDF Datasheet

 
Part No. 6AM12
Description Silicon N-channel/p-channel Complementary Power MOS Fet Array

File Size 122.48K  /  14 Page  

Maker

Renesas



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 6AM12
Maker: HITACHI
Pack: ZIP
Stock: 446
Unit price for :
    50: $2.20
  100: $2.09
1000: $1.98

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ 6AM12 Datasheet PDF Downlaod from Datasheet.HK ]
[6AM12 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 6AM12 ]

[ Price & Availability of 6AM12 by FindChips.com ]

 Full text search : Silicon N-channel/p-channel Complementary Power MOS Fet Array


 Related Part Number
PART Description Maker
EMH2602 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
6AM14 Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
2SK439 2SK439E K439 Silicon N Channel MOS FET
Silicon N-Channel MOS FET 硅N沟道场效应晶体管
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK
2SK439
Hitachi,Ltd.
Sanyo Semicon Device
Hitachi Semiconductor
2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N沟道硅片结型场效应晶体管的阻抗流脑转
N-channel Silicon J-FET
NEC, Corp.
NEC[NEC]
2SK3783 N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC[NEC]
2SK435 2SK435E Silicon N Channel MOS FET
Silicon N-Channel Junction FET
TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
Hitachi Semiconductor
HAT1024R-EL-E HAT1024R-15 3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
Renesas Electronics, Corp.
Renesas Electronics Corporation
HAT2035R HAT2035R-EL-E 0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
RJM0306JSP-00-J0 RJM0306JSP10 Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
Renesas Electronics Corporation
MG300Q2YS65H 300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba Semiconductor
Toshiba Corporation
4AM15 Silicon N Channel/P Channel Power MOS FET Array
From old datasheet system
hitachi
2SJ555 2SJ555-E 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
Silicon P Channel MOS FET
Renesas Electronics Corporation
 
 Related keyword From Full Text Search System
6AM12 Server 6AM12 参数 封装 6AM12 Audio 6AM12 DATASHEET PDF 6AM12 Reference
6AM12 型号替换 6AM12 Logic 6AM12 应用线路 6AM12 usb-hs otg 6AM12 Matsushita
 

 

Price & Availability of 6AM12

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.29668498039246